PART |
Description |
Maker |
S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆,32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc. PROM Spansion, Inc. SPANSION LLC
|
AT49BV6416T-70TI AT49BV6416-70TU AT49BV6416-70TI |
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
|
Atmel Corp.
|
AT49SN6416T |
64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory
|
Atmel Corp.
|
W29GL256PL9B W29GL256PL9T-TR W29GL256PH9T W29GL256 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
W29GL064CB7S W29GL064CH7B W29GL064CL7B W29GL064CT7 |
64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
W29GL032CT7A W29GL032CT7B W29GL032CT7S W29GL032CB7 |
32M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
W29GL128CH9C W29GL128CL9C |
128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
AT49SN6416 |
64M bit and 32M, 1.8-Volt Burst and Page Mode Flash Memory
|
Atmel Corp
|
S29GL032M10BBIR20 S29GL032M10FBIR20 S29GL032M10TBI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 μm MirrorBit Process Technology
|
SPANSION
|
AM29PDS322DB120WMI AM29PDS322DT100WMI AM29PDS322DT |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
|
SPANSION AMD[Advanced Micro Devices]
|
EN29GL128HL |
128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
|
Eon Silicon Solution In...
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