| PART |
Description |
Maker |
| 2SB1114ZM-T2-AZ 2SB1114ZM-T1-AZ 2SB1114ZL-T2-AZ 2S |
2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR POWER, MINIMOLD, SC-62, 3 PIN
|
ON Semiconductor
NXP Semiconductors N.V.
|
| 2SB1115YK-T2 2SB1115YK-T2-AZ 2SB1115YK-T1-AZ 2SB11 |
1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR POWER, MINIMOLD, SC-62, 3 PIN
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR POWER, MINIMOLD, SC-62, 3 PIN
|
Vishay Intertechnology, Inc.
|
| 2SC5338-15 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
| 2SC3357-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
| UPA901TU-T3-A UPA901TU UPA901TU-A UPA901TU-T3 |
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
|
NEC[NEC]
|
| FA1A4ZL69-T1B FA1A4ZL67-T1B FA1A4ZL68-T1B |
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR MINIMOLD, SC-59, 3 PIN
|
3M Company
|
| EDZTE-175.6B EDZTE-176.8B |
5.6 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MINIMOLD, EMD2, SC-79, 2 PIN
6.8 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE MINIMOLD, EMD2, SC-79, 2 PIN
|
NXP Semiconductors N.V.
|
| UPA880TS-T3 UPA880TS |
NPN SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PACKAGE)
|
NEC Corp.
NEC[NEC]
|
| NESG2021M16 NESG2021M16-A NESG2021M16-T3 NESG2021M |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
California Eastern Labs
|
| NESG4030M14 NESG4030M14-A NESG4030M14-T3 NESG4030M |
NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
|
NEC
|
| 2SC5761 2SC5761-T2 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
|
NEC[NEC]
|
| NESG240033 NESG240033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
