| PART |
Description |
Maker |
| 0560-6600-A1 S560-6600-B3 |
ADSL Magnetics For Analog Devices AD20MSP918 (Custom)
|
Bel Fuse Inc.
|
| DSM2150F5V |
DSM (DIGITAL SIGNAL PROCESSOR SYSTEM MEMORY) FOR ANALOG DEVICES DSPS (3.3V SUPPLY)
|
ST Microelectronics
|
| DSM2150F5V DSM2150F5V-12T6 |
DSM (Digital Signal Processor System Memory) for Analog Devices DSPs (3.3V Supply)
|
STMICROELECTRONICS[STMicroelectronics]
|
| ADV7521NKBCBZRL-80 |
ANALOG DEVICES SIMPLIFIES PORTABLE HD CAMERA DESIGN WITH WORLD SMALLEST HDMI TRANSMITTER
|
Analog Devices
|
| DSM2180F3V90T6 DSM2180F315K6 DSM2180F315T6 DSM2180 |
DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (3.3V Supply)
|
STMICROELECTRONICS[STMicroelectronics]
|
| AD9765 DAC_12B_10-100NS AD568 AD9742 AD9752 AD9753 |
Analog Devices: Data Converters: DAC 12-Bit, 10 ns to 100 ns Converters Selection Table
|
Analog Devices, Inc.
AD[Analog Devices]
|
| MICROSMD050F MICROSMD050F-2 |
Specification Status: Released
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
| TRF600-150-2 TRF600-160 TRF600-160-2 TRF600-160-R1 |
PolySwitch Resettable Devices Telecommunications & Networking Devices
|
Tyco Electronics
|
