| PART |
Description |
Maker |
| TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz
WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
| ICE2A165 ICE2A365 |
Integrated Power ICs - max. Pout=18W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=100kHz, Vbreak=650V, DIP8
|
Infineon
|
| MW7IC008NT1 MW7IC008NT111 |
RF LDMOS Wideband Integrated Power Amplifier Stable into a 5:1 VSWR. All Spurs Below --60 dBc
|
Freescale Semiconductor, Inc
|
| STGIPS10K60A |
IGBT intelligent power module (IPM) 10 A, 600 V, DBC isolated SDIP-25L molded
|
STMicroelectronics
|
| STGIPS14K60 |
IGBT intelligent power module (IPM) 12 A, 600 V, DBC isolated, SDIP-25L molded
|
STMicroelectronics
|
| TIM3742-16UL |
HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
|
Toshiba Semiconductor
|
| TIM6472-12UL09 |
HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM5964-25UL TIM5964-25UL09 |
HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM5964-4UL09 |
HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| AWT6235RM20P8 |
WiBro 3.4V/25.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
|
