| PART |
Description |
Maker |
| 2PD602AS 2PD602AR 2PD602AQ 2PD602A |
Paper Capacitor; Voltage Rating:1500VDC; Capacitor Dielectric Material:Paper; Capacitance:3uF; Capacitance Tolerance: /- 10%; Lead Pitch:20.64mm; Leaded Process Compatible:No; Package/Case:A; Peak Reflow Compatible (260 C):No RoHS Compliant: No
NPN general purpose transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| M5LV-320_192-10AI M5LV-512_104-6AC M5-192_74-15YC |
IND SHLD 3.3UH 9A RMS SMT
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
10-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 12 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Commercial EE PLD, 15 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 15 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP240
CONNECTOR ACCESSORY EE PLD, 10 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 20 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
CONNECTOR ACCESSORY EE PLD, 12 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP240
Fifth Generation MACH Architecture
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| MP3-X2PCM22.50.1/20/275VACREEL18.5/500 MP3-X2PCM22 |
CAPACITOR, METALLIZED PAPER, 0.1 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, METALLIZED PAPER, 0.047 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, METALLIZED PAPER, 1 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, METALLIZED PAPER, 0.001 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, METALLIZED PAPER, 0.0022 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
|
Rhombus Industries, Inc.
Electronic Theatre Controls, Inc.
|
| CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV |
Memory : Sync SRAMs
18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
|
Cypress Semiconductor
|
| CRCW080593K1FKTA CRCW0805931RFKTA CRCW-0805-7R87-F |
Res Thick Film 0805 93.1K Ohm 1% 1/8W ±100ppm/C Molded SMD Paper T/R
Res Thick Film 0805 931 Ohm 1% 1/8W ±100ppm/C Molded SMD Paper T/R
D../CRCW....-P Thick Film, Rectangular, Precision Resistors
Cap Ceramic 47pF 100V U2J 2% (5.5 X 3.5mm) Radial 5mm 125C Bulk
D 100V 18PF 2% C0G AMMO E3 - Ammo Pack
Cap Ceramic 470pF 100V P3K 2% (11 X 4mm) Radial 5mm 125C Bulk
D 50V 470PF 5% SL BULK E3 - Bulk
Film/Foil Resistor, RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 5 %, 200 ppm, 91 ohm, SURFACE MOUNT, 0805, CHIP
Res Thick Film 1210 100 Ohm 1% 1/2W ±100ppm/C Molded SMD Paper T/R
1210,100,5%,T/R - Tape and Reel
Res Thick Film 1210 75 Ohm 1% 1/2W ±100ppm/C Molded SMD Paper T/R
MO-002AG7 NZFD
D 500V 150PF 5% SL0 BULK E3 - Bulk
D 500V 330PF 5% SL0 REEL E3 - Tape and Reel
Res Thick Film 2512 150 Ohm 1% 1W ±100ppm/C Molded SMD Blister T/R
Res Thick Film 0603 62K Ohm 1% 1/10W ±100ppm/C Molded SMD Paper T/R
0603,62M,5%,T/R - Tape and Reel
Res Thick Film 0603 562K Ohm 1% 1/10W ±100ppm/C Molded SMD Paper T/R
Res Thick Film 0603 560 Ohm 1% 1/10W ±100ppm/C Molded SMD Paper T/R
Film/Foil Resistor, RESISTOR, METAL GLAZE/THICK FILM, 0.0625 W, 5 %, 200 ppm, 56 ohm, SURFACE MOUNT, 0603, CHIP
Res Thick Film 1206 16K Ohm 1% 1/4W ±100ppm/C Molded SMD Paper T/R
D 500V 3,3NF -20/ 80% Y5V AMMO E3 - Ammo Pack
D 500V 8,2PF 0,25PF C0H BULK E3 - Bulk
D 500V 6,8PF 0,25PF C0H BULK E3 - Bulk
Res Thick Film 0402 2.47 Ohm 5% 1/16W ±400ppm/C Molded SMD Paper T/R
Res Thick Film 0805 240 Ohm 1% 1/8W ±100ppm/C Molded SMD Paper T/R
Cap Ceramic 15pF 100V C0G 2% (5 X 3.5mm) Radial 5mm 125C Bulk
Res Thick Film 0805 301K Ohm 1% 1/8W ±100ppm/C Molded SMD Paper T/R
|
Vishay Dale
|
| BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BB |
3.3V, 20W DC-DC converter
15V, 20W DC-DC converter
12V, 20W DC-DC converter
Analog IC
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
20W DC-DC Converter(输出功率20WDC-DC转换
|
M.S. Kennedy Corp.
M.S. Kennedy Corporation
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| FKM2PCM51000/10/100VDCROLL18.5 FKM2PCM51000/10/400 |
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 100 V, 0.001 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 400 V, 0.001 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 400 V, 0.0022 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 400 V, 0.0047 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 100 V, 0.0047 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 250 V, 0.0022 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 250 V, 0.0015 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 250 V, 0.0033 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 250 V, 0.001 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 400 V, 0.0015 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 100 V, 0.0015 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 100 V, 0.0033 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
CAPACITOR, FILM/FOIL, MIXED (FILM PAPER), 250 V, 0.0068 uF, THROUGH HOLE MOUNT RADIAL LEADED, ROHS COMPLIANT
|
Electronic Theatre Controls, Inc.
|
| CY7C1515KV18-250BZXI CY7C1515KV18-300BZC CY7C1515K |
72-Mbit QDR II SRAM 4-Word Burst Architecture
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
http://
Cypress Semiconductor, Corp.
|
| JN1-22-20S-R-10000 JN1-22-22S-10000 JN1-22-26S-100 |
MAGAZINE PAPER TYPE
|
Japan Aviation Electronics Industry, Ltd.
|
| IL-Z-C3-A-1-15000 |
MAGAZINE PAPER TAPE
|
Japan Aviation Electronics Industry, Ltd.
|
|
