| PART |
Description |
Maker |
| UG32F11 |
Display Devices / Specifica Del Modulo LCD
|
Samsung Electronic
|
| ADLQM67PC-3517UE |
Hardware monitor with api
|
ADL Embedded Solutions
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1415BV18-250BZI CY7C1415BV18-167BZI |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| CY7C1315CV18-200BZC CY7C1315CV18-250BZC |
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V 512K X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1379B-117AC CY7C1379B-117BZC CY7C1379B |
9-Mbit (256K x 32) Flow-through SRAM with NoBL(TM) Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL⑩ Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL垄芒 Architecture
9-Mbit (256K x 32) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| CY7C1315AV18-250BZC CY7C1311AV18 CY7C1311AV18-167B |
18-Mb QDR(TM)-II SRAM 4-Word Burst Architecture
18-Mb QDRTM-II SRAM 4-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1314BV18 CY7C1312BV18 |
18-Mbit QDR庐 II SRAM Two-Word Burst Architecture
18-Mbit QDR? II SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1426BV18 CY7C1413BV18 CY7C1411BV18 |
36-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture
36-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
