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512N - Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits CUTTERS SIDE FULL FLUSH 110M 64K Nonvolatile SRAM

512N_358510.PDF Datasheet

 
Part No. 512N 622N 522N 2212E
Description Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
CUTTERS SIDE FULL FLUSH 110M
64K Nonvolatile SRAM

File Size 844.38K  /  4 Page  

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 Full text search : Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits CUTTERS SIDE FULL FLUSH 110M 64K Nonvolatile SRAM
 Product Description search : Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits CUTTERS SIDE FULL FLUSH 110M 64K Nonvolatile SRAM


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Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
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Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
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