| PART |
Description |
Maker |
| CPH3307 |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
|
SANYO[Sanyo Semicon Device]
|
| 5LP01N |
Dual High Efficiency, Low Noise, Synchronous Step-Down Switching Regulators
P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(超高速转换应用的P沟道硅MOSFET)
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Pico MOSFET Series
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| CPH3355 CPH3355TL |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
|
Sanyo Semicon Device
|
| 2SK3980 |
900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| 2SJ596 2SJ596TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252VAR
P-Channel Silicon MOSFET DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| ECH8602M |
6 A, 30 V, 0.031 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
N-Channel Silicon MOSFET
|
Sanyo Semicon Device
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SK3925-01 |
XTAL CER SMT 6X3.5 2PAD 34 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK3560 |
Silicon N-channel power MOSFET For PDP/For high-speed switching 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| FDW2515N FDW2515NZ |
CAP CER 68000PF 100V 10% X7R1210 5.8 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
Dual N-Channel 2.5V Specified PowerTrench MOSFET
|
Glenair, Inc.
FAIRCHILD[Fairchild Semiconductor]
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
|
