| PART |
Description |
Maker |
| KM23C8100D KM23C8100DG |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| AT49BV8192A-11CI |
EEPROM|FLASH|512KX16/1MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Air Cost Control
|
| KM29V64000TS |
8M X 8 BIT NAND FLSH MEMORY
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet
512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| WE512K16-140G4CA WE512K16-140G4Q WE512K16-150G4C W |
512Kx16 CMOS EEPROM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WSF2816-39XX WSF2816-39H1CA WSF2816-39G2UIA WSF281 |
128KX16 SRAM/512KX16 FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| HY29F800 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
Hynix Semiconductor
|
| HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| KM23V8105D KM23V8105DG KM23V8105G |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MBM29LV800BA-12PBT |
IC,EEPROM,NOR FLASH,512KX16/1MX8,CMOS,BGA,48PIN
|
Fujitsu
|
| LH28F800BGHE |
IC,EEPROM,NOR FLASH,512KX16,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
|
sharp
|
