PART |
Description |
Maker |
MB98A809AX |
512K Flash Eelectrically Erasable and Programmable (Flash) memory cards(512K电可擦除可编程闪速存储器 12k闪光Eelectrically可擦除和可编程(闪存)记忆卡(为512k电可擦除可编程闪速存储器卡)
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Fujitsu, Ltd.
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AM29F002BT-90ED AM29F002BB-70ED AM29F002NBB-70PD |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 Flash Memory IC; Package/Case:32-DIP; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes
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SPANSION LLC
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W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
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Winbond Electronics WINBOND[Winbond]
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AT25DF081-UUN-T AT25DF081-MHN-Y AT25DF081-MHN-T AT |
4 Mbit Uniform Sector, Serial Flash Memory 1M X 8 FLASH 1.8V PROM, PDSO8 8-megabit 1.65-volt Minimum SPI Serial Flash Memory
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Atmel, Corp. 聚兴科技股份有限公司 ATMEL Corporation
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M29F002B M295V002B-120K6TR M295V002B-120XK6TR M29F |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位256Kb × 8,启动座单电源闪 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8,启动座单电源闪 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2兆位56Kb × 8,启动座单电源闪
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ST Microelectronics 意法半导 STMicroelectronics N.V.
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AM29LV400B-100WAC AM29LV400B-100WACB AM29LV400B-10 |
PTSE 6C 6#20 SKT RECP Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Metal; Series:MS C-26482 Series I; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, CAP 0.47UF 50V 50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU PTSE 3C 3#20 PIN RECP 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 100 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 150 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PBGA48 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位).0伏的CMOS只引导扇区闪 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
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Spansion, Inc. SPANSION LLC
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AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏,只有闪存
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Atmel Corp. Atmel, Corp.
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TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56 Intel StrataFlash Memory (J3) Strata Flash Memory 256M 256M Strata Flash Memory
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NUMONYX Intel Corporation
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UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access 8K x 8 CMOS SRAM
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United Microelectronics Corporation ETC UMC[UMC Corporation]
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W29EE011P-90 W29EE011P-15 W29EE011T-15 |
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes KJA SERIES III 128K X 8 CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 128K X 8 CMOS FLASH MEMORY 128K的8的CMOS闪存
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Winbond Electronics Corp Winbond Electronics, Corp.
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