PART |
Description |
Maker |
WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module EEPROM MCP
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White Electronic Designs
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UPB100474B-15 UPB100474B-10 UPB100474B-6 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 15 ns. 1,024 x 4-bit 100K ECL RAM. Access time(max) 10 ns. 1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
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NEC
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5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM. 15ns access time. Lead finish hot gold. 512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped. 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. 512K x 18 SRAM. 15ns access time. Lead finish factory option. 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
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Aeroflex Circuit Technology
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A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
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AMIC Technology
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UT6164CJC-10 UT6164CJC-12 UT6164CJC-15 |
Access time: 10 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 8 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 8 K x 8 Bit high speed CMOS SRAM
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UTRON Technology
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UT62256CLS-35LE UT62256CLS-70LE UT62256CLS-70LLE U |
Access time: 35 ns, 32 K x 8 Bit low power CMOS SRAM Access time: 70 ns, 32 K x 8 Bit low power CMOS SRAM
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UTRON Technology
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5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
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Aeroflex Circuit Technology
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AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time x16 EDO Page Mode DRAM
|
Alliance Semiconductor
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M38047M6-XXXFP M38047M6-XXXHP M38047M6-XXXSP M3804 |
3803/04 Group: General Purpose, with Flash RAM size: 256bytes; single-chip 8-bit CMOS microcomputer RAM size: 640bytes; single-chip 8-bit CMOS microcomputer RAM size: 896bytes; single-chip 8-bit CMOS microcomputer RAM size: 512bytes; single-chip 8-bit CMOS microcomputer RAM size: 768bytes; single-chip 8-bit CMOS microcomputer RAM size: 384bytes; single-chip 8-bit CMOS microcomputer RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer RAM size: 2048bytes; single-chip 8-bit CMOS microcomputer RAM size: 1536bytes; single-chip 8-bit CMOS microcomputer RAM size: 192bytes; single-chip 8-bit CMOS microcomputer Single Chip 8-bit Microcomputer
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Mitsubishi Electric Corporation
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IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
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Integrated Device Techn...
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K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
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Samsung Electronic SAMSUNG[Samsung semiconductor]
|
CDP68HC68T1 |
Clock, Real-Time, Serial with RAM, Power Sense/Control, CMOS
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Intersil
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