| PART |
Description |
Maker |
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| 8N50L-TF1-T 8N50G-TF1-T 8N50G-TA3-T 8N50L-TA3-T |
8 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 12N50L-TF1-T 12N50G-TF1-T 12N50G-TA3-T 12N50L-TA3- |
12 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MTW20N50E-D |
Power MOSFET 20 Amps, 500 Volts N-Channel TO-247
|
ON Semiconductor
|
| NTP6N50 |
Power MOSFET 6 Amps, 500 Volts N-Channel TO-220
|
ONSEMI[ON Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| SDR955_3 SDR953_3 SDR953-3 SDR954_3 |
50 AMPS 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| NTP85N03 NTB85N03 NTB85N03T4 |
Power MOSFET 85 Amps / 28 Volts
Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
|
ONSEMI[ON Semiconductor]
|
| NTF3055-100 NTF3055-100T3G |
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V逻辑电平,N通道 SOT-223 封装的功率MOSFET)
Power MOSFET 3.0 Amps 60 Volts N−Channel
|
ON Semiconductor
|
| NTB75N03L09 NTB75N03L09G NTB75N03L09T4 NTP75N03L09 |
Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK
Power MOSFET 75 Amps, 30 Volts N-Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| NTP18N06L NTB18N06LT4 NTB18N06LT4G NTB18N06L |
Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK)
Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak
|
Microsemi, Corp.
ONSEMI[ON Semiconductor]
|
