PART |
Description |
Maker |
BD433 BD435 BD436 BD438 4127 BD437 BD434 -BD437 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??) From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS Complemetary Silicon Power Transistors(互补硅功率晶体管)
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STMICROELECTRONICS[STMicroelectronics] 意法半导
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BD442 BD439 BD441 4130 BD440 -BD441 -BD442 |
Complemetary Silicon Power Transistors(浜?ˉ纭?????浣??) From old datasheet system COMPLEMENTARY SILICON POWER TRANSISTORS Complemetary Silicon Power Transistors(互补硅功率晶体管)
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STMICROELECTRONICS[STMicroelectronics] 意法半导
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BD243B ON0193 BD244C BD243C BD244B |
Complementary Silicon Plastic Power Transistors From old datasheet system 6 AMPERE POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON
|
Motorola Inc MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D |
Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount Complementary Silicon Plastic Power Transistors 6 A, 100 V, PNP, Si, POWER TRANSISTOR Complementary Silicon Plastic Power Transistors 6 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http:// ONSEMI[ON Semiconductor]
|
TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB From old datasheet system DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
2N4922 2N4921 2N4923 2N4921-D |
Medium-Power Plastic NPN Silicon Transistors 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
|
ONSEMI[ON Semiconductor]
|
MJW3281AG MJW3281A10 MJW1302AG |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 15 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-247AD Complementary NPN-PNP Silicon Power Bipolar Transistors
|
ON Semiconductor
|
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
2N6437 2N6438 2N6437-D |
POWER TRANSISTORS PNP SILICON 25 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA High-Power PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
2SA489 2SA490 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|
BD436 BD438 BD434 |
Silicon NPN Power Transistors Silicon PNP Power Transistors
|
Savantic, Inc.
|