| PART |
Description |
Maker |
| DL3149-070 |
Laser Diode, 5mW Power, 685nm Wave Length, 40mA Current
|
Sanyo Semiconductor
|
| DL3147-041 |
Laser Diode, 5mW Power, 655nm Wave Length, 45mA Current
|
Sanyo Semiconductor
|
| SLD1122VS |
5mW Visible Laser Diode
|
Sony Corporation
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| DL-7140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| DL-6140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| STM51007N STM51007G STM51007GE9410 |
FIBER OPTIC LASER DIODE EMITTER, 1280-1330nm, 1000Mbps, PANEL MOUNT, TO-18, FC CONNECTOR
1300 nm Laser, Medium Power
|
INFINEON TECHNOLOGIES AG
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
