PART |
Description |
Maker |
WG1204301 WG20042R23 WG12032R23 WESTCODESEMICONDUC |
4300 V, GATE TURN-OFF SCR 4200 V, GATE TURN-OFF SCR 3200 V, GATE TURN-OFF SCR 1400 V, GATE TURN-OFF SCR 3400 V, GATE TURN-OFF SCR 4100 V, GATE TURN-OFF SCR
|
Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
|
FG600AL28 POWEREXINC-FG1000AH44 GT300AV70 GT300AL2 |
1400 V, GATE TURN-OFF SCR 3500 V, GATE TURN-OFF SCR 1200 V, GATE TURN-OFF SCR 3600 V, GATE TURN-OFF SCR 2300 V, GATE TURN-OFF SCR 2500 V, GATE TURN-OFF SCR
|
POWEREX INC
|
2N5166 2N4147 2N1600 2N1598 2N893 2N899 |
20 A, 400 V, SCR 0.25 A, 100 V, SCR, TO-52 8 A, 50 V, SCR, TO-64 1.6 A, 300 V, SCR, TO-5 0.25 A, 15 V, SYMMETRICAL GTO SCR, TO-18 0.25 A, 100 V, GATE TURN-OFF SCR, TO-18
|
SEMITRONICS CORP
|
MCK100-6A |
Standard Gate SCR
|
DnI
|
DCP10C60 |
Standard Gate SCR
|
DnI
|
BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五(巴西)总裁| 1.5AI(丙)|02AA
|
Teridian Semiconductor, Corp.
|
MCR101G-X-XX-T92-K MCR101G-X-XX-T92-B MCR101-6-B-T |
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8 A, 400 V, SCR, TO-92 0.8 A, 600 V, SCR, TO-92 0.8 A, 200 V, SCR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
350PEQ50W 350PEQ90W 350PEQ60W 350PEQ110W 350PEQ100 |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR
|
International Rectifier
|
CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92 0.47 A, 300 V, SCR, TO-92 LOW POWER USE PLANAR PASSIVATION TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MCR22-6-D MCR22-2RL1 |
Seinsitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Sensitive Gate SCR
|
ON Semiconductor
|
160PFT100A 160PFT160 160PFT120A 160PFT140 |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR V(rrm/drm): 1600V; 600A I(tgq) gate turn-off hockey puk SCR V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR V(rrm/drm): 1400V; 600A I(tgq) gate turn-off hockey puk SCR
|
International Rectifier
|
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