| PART |
Description |
Maker |
| HYB25D128160CE-6 HYB25D128400CE-6 HYB25D128800CE-6 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM Components - 128Mb (32Mx4) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM Components - 128Mb (16Mx8) DDR333 (2.5-3-3); Available 2Q04
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/ |
128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格
RESISTOR, 2M OHM, 0.063W, 1%
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L80 |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70
Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control & 11 Analog Inputs 20-SOIC -40 to 125
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70
Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC 0 to 70
Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes
Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-SOIC 128MB DDR SDRAM
Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP 0 to 70 128MB DDR SDRAM
DIODE ZENER SINGLE 500mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-123 3K/REEL 128MB DDR SDRAM
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-SOIC 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL 128MB DDR SDRAM
DIODE ZENER SINGLE 200mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-323 3K/REEL 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-PDIP 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 51Vz 5mA-Izt 0.0588 0.1uA-Ir 38 SOT-23 3K/REEL 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0 DDR SDRAM的规范版.0
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 128MB DDR SDRAM
128Mb DDR SDRAM 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-PDIP 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0
128Mb DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
http://
|
| HY5DU281622DT-J HY5DU2842DT-J HY5DU2842DT-L HY5DU2 |
DDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| HY5DU28422ET |
128Mb DDR SDRAM
|
Hynix Semiconductor
|
| V58C2256164S V58C2256164SXT6 V58C2256164SXT7 V58C2 |
HIGH PERFORMANCE 2.5 VOLT 256 Mbit DDR SDRAM
High performance 2.5V 128MB DDR SDRAM
|
Mosel Vitelic Corp
|
| WED3EG6417S202D4 WED3EG6417S265D4 WED3EG6417S262D4 |
128MB - 16Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7218S265BD4 W3EG7218S202AD4 W3EG7218S202BD4 W3 |
128MB - 16Mx72 DDR SDRAM UNBUFFERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYMD1166458 |
16Mx64|2.5V|H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
|
| HYMD116645BL8-K HYMD116645BL8-L HYMD116645BL8-M HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX64 |的CMOS |内存| 184PIN |塑料
16Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| W3EG7217S262D3 W3EG7217S265D3 W3EG7217S202D3 W3EG7 |
128MB - 16Mx72 DDR SDRAM REGISTERED, ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
