| PART |
Description |
Maker |
| ZABG6002 |
LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
|
Diodes
|
| ZABG6002 ZABG6002JB20TC ZABG6002Q20TC |
SPECIALTY CONSUMER CIRCUIT, PQCC20
LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
|
Diodes Incorporated
|
| ZABG4002 |
Advanced Low Power Four-Stage GaAs FET Bias IC
|
Diodes
|
| AN11007 |
Single stage 5-6 GHz WLAN LNA with BFU730F
|
NXP Semiconductors
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| MGF0909A11 |
High-power GaAs FET(small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0905A MGF0905A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0919A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| 2SA562TM E000596 |
From old datasheet system
AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS
TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)
|
ETC
Toshiba Semiconductor
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SC5347 |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications 高频半功率输出级，低噪声输出放大器中的应
High-Frequency Semi-Power Output Stage/ Low-Noise Medium Output Amplifiers Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
