PART |
Description |
Maker |
HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66 DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66 512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60 DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
HMP564F7FFP8C-C4 HMP564F7FFP8C-S5 HMP564F7FFP8C-S6 |
240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver. 256M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240 64M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
|
http:// Hynix Semiconductor, Inc.
|
MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100 128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100 64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
HYB18T1G800CF-1.9 |
128M X 8 DDR DRAM, 0.35 ns, PBGA60
|
QIMONDA AG
|
IS46DR16128-3DBLA2 IS43DR16128-3DBI |
128M X 16 DDR DRAM, 0.45 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
V58C2512404SBI6I |
128M X 4 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
NT1GT72U4PB0BV-25D |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
NANYA TECHNOLOGY CORP
|
EBJ10EE8BAFA-AG-E |
128M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
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