PART |
Description |
Maker |
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM 65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group SONY
|
TC551664AJ |
65536 Word x 16-Bit CMOS Static RAM
|
Toshiba Semiconductor
|
HN27C1024HCC |
65536-word x 16-bit CMOS UV Erasable and Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
CXK5V8512TM- CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word X 8-bit High Speed CMOS Static RAM 65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
SONY[Sony Corporation] Sony, Corp.
|
CXK5V16100TM-10LLX CXK5V16100TM-85LLX CXK5V16100TM |
128 x 64 pixel format, LED Backlight available 65536-word X 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
HM53461 HM53461P-10 HM53461P-12 HM53461P-15 HM5346 |
120ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM 150ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM 100ns; V(cc): -0.5 to 7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM 65,536-WORD x 4-BIT MULTIPORT CMOS VIDEO RAM 65536 word x 4 Bit Multiport CMOS Video RAM
|
Hitachi Semiconductor Hitachi,Ltd.
|
M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM 65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
M5M564R16DJ-10 M5M564R16DJ-12 M5M564R16DJ-15 M5M56 |
From old datasheet system 1048576-BIT (65536-WORD BY 16-BIT) CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静态RAM Octal D-Type Edge-Triggered Flip-Flops With 3-State Outputs 20-TSSOP -40 to 85 1048576位(65536字由16位)的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位(8388608字由16位)的CMOS闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
MS52C1162A |
65,536-Word × 16-Bit or 131,072-Word × 8-Bit STATIC RAM 1,048,576-Word × 16-Bit or 2,097,152-Word × 8-Bit One Time PROM(64k字6位或128k字位静态RAM 1M字6位或2M字OTPROM)
|
OKI SEMICONDUCTOR CO., LTD.
|