| PART |
Description |
Maker |
| HN25084 |
2K x 8 TTL PROM Memory
|
Hitachi Semiconductor
|
| 82S129 N82S126A N82S126N N82S129A N82S129N 82S126 |
V(cc): 7.0V; V(in): 5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc.
1K BIT TTL BIPOLAR PROM
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| UT28F256 UT28F256T-45UPX 5962F9689103QXA 5962F9689 |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
320 x 240 pixel format, LED or CFL Backlight
Recalibration Service for 2120B B&K Oscilloscope
Oscilloscope; Scope Type:Analog; Scope Bandwidth:30 MHz; Scope Channels:2 Scope; Calibrated:No; Rise Time:12ns; Sensitivity:5 mV/div to 5 V/div; Accuracy: /- 3 %; Resistance:1Mohm
Recalibration Service for 2125A B&K Oscilloscope
Radiation-Hardened 32K x 8 PROM 辐射加固32K的8胎膜早破
Recalibration Service for 2120B B&K Oscilloscope 辐射加固32K的8胎膜早破
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-Hardened 32K x 8 PROM
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
NEC, Corp.
Aeroflex Circuit Techno...
|
| XC17V00 DS073 XC17V16PC20C XC17V16PC20I XC17V16PC4 |
GIGATRUE 550 CAT6 PATCH 100 FT, SNAGLESS, BLACK 2M X 1 CONFIGURATION MEMORY, PQCC20
XC17V00 Series Configuration PROM XC17V00系列配置PROM
XC17V00 Series Configuration PROM 2M X 8 CONFIGURATION MEMORY, PQFP44
Advance Product Specification
From old datasheet system
|
Xilinx, Inc.
XILINX[Xilinx, Inc]
|
| S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
CONNECTOR ACCESSORY 连接器附
CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位）.0伏的CMOS只引导扇区闪
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只引导扇区闪
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只引导扇区闪
JT 16C 16#16 PIN RECP
CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR
SSR OCMOS FET 200MA NO 6-SOIC
|
SPANSION LLC
Spansion, Inc.
Spansion Inc.
|
| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64
256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
4M X 16 FLASH 3V PROM, 90 ns, PDSO56
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
2M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| XQ1701L-SERIES XQR1701L-SERIES XQ1701LCC44M XQR170 |
Cascadable for storing longer or multiple bitstreams
QPro configuration PROM. Radiation-hardened.
QPro configuration PROM. SMD number 5962-9951401NXB.
QPro configuration PROM. SMD number 5962-9951401QYA
QPro Series Configuration PROMs (XQ) including Radiation-Hardened Series (XQR) 1M X 1 CONFIGURATION MEMORY, PDSO20
1M X 1 CONFIGURATION MEMORY, CQCC44
|
Xilinx, Inc.
XILINX INC
|
| W39V080FA W39V080FAP W39V080FAT W39V080FAQZ W39V08 |
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PQCC32
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO40
1M 8 CMOS FLASH MEMORY WITH FWH INTERFACE 1M X 8 FLASH 3.3V PROM, 11 ns, PDSO32
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| AM29DL16XC AM29DL164CB80WCI AM29DL164CB120WCE AM29 |
Am29DL16xC - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only. Simultaneous Operation Flash Memory Am29DL16xC - 16兆位米8 1个M x 16位）.0伏的CMOS只。同时作业闪
2M X 8 FLASH 3V PROM, 80 ns, PBGA48
2M X 8 FLASH 3V PROM, 120 ns, PBGA48
2M X 8 FLASH 3V PROM, 90 ns, PBGA48
|
AMIC Technology, Corp.
ADVANCED MICRO DEVICES INC
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
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