| PART |
Description |
Maker |
| 2SB805 2SB806 2SB806-T1 2SB805-T2 2SB805-T1 2SB806 |
Low frequency power amplification
Silicon transistor
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| MJE371 ON2036 |
POWER TRANSISTOR PNP SILICON 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA
4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| BUV21 BUV21_D ON0257 |
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS
SITCHMODE Series NPN Silicon Power Transistor
|
Motorola, Inc.
ON Semiconductor
|
| MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
| STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840
NPN Silicon Power Transistor
|
AUK, Corp.
AUK[AUK corp]
|
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| 2SB624 2SB624-T1B 2SB624-L 2SB624-T2B 2SB624BV3 |
BJT 双极型晶体管
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
Silicon transistor
|
NEC, Corp.
NEC[NEC]
Weitron Technology
|
| 2SA1221 2SA1222 2SA1222-T 2SA1221-T 2SA1222K |
BJT
PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| 2SA1845 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC
|
| MJ423_D ON1993 MJ423 |
POWER TRANSISTOR NPN SILICON
From old datasheet system
10 AMPERE POWER TRANSISTOR NPN SILICON 125 WATTS
|
ONSEMI[ON Semiconductor]
|
