| PART |
Description |
Maker |
| 1MB30-060 |
Fuji Discrete Package IGBT
|
Fuji Electric
|
| 1MBC05D-060 |
Fuji Discrete Package IGBT
|
Fuji Electric
|
| 1MBH15D-120 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MB10D-120 |
Fuji Discrete Package IGBT 16 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
|
| 1MBH50D-060 |
Fuji Discrete Package IGBT 82 A, 600 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
|
| 1MB20D-060 |
Fuji Discrete Package IGBT 38 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| OM6517SA OM6517SW |
1200V DISCRETE Hi-Rel IGBT in a D3 package
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
|
International Rectifier
List of Unclassifed Manufacturers
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| 1MBH10D-060 |
Ratings and characteristics of Fuji IGBT 30 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| IRGP440U |
500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| IRGPH30S |
1200V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
