| PART |
Description |
Maker |
| MRF904 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| MRF544 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| 2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi
|
| MRF8372 MRF8372G |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| MS1261 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| 2N6255 MSC1306 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| MRF586 MSC1320 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| MRF5812 MRF5812R1 MRF5812R2 MRF5812R1R2 MSC1319 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| 2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp.
NEC, Corp.
|
| MRF951 |
CAP CERAMIC 4PF 25V C0G 0201
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
|
