| PART |
Description |
Maker |
| KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 K |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
|
ETC[ETC]
Samsung semiconductor
|
| K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/ |
512K x 16Bit x 2 Banks Synchronous DRAM 12k × 16 × 2银行同步DRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM416S1021C KM416S1021CT-G7 KM416S1021CT-G8 KM416S |
512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface 12k × 16 × 2银行同步DRAM接口的萨里卫星技术有限公
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM（工业温度）)
|
Micron Technology, Inc.
|
| K4S511533F-YF |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
| K4S281632E-TC7C K4S281632E-TL7C |
2M x 16bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
| IC42S16400A-7BIG IC42S16400A-6BG IC42S16400A-6BIG |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM 100万16 × 4银行4兆位）内
|
Elpida Memory, Inc.
Integrated Circuit Solu...
|
| IC42S16400A IC42S16400A-7TIG IC42S16400A-6BG IC42S |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| KM416S8030BN-G_FL KM416S8030BN KM416S8030BN-G_FH K |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
|
