| PART |
Description |
Maker |
| MS1329 |
RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 60; P(in) (W): 12; Gain (dB): 7; Vcc (V): 28; Cob (pF): 80; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Microsemi, Corp.
|
| LMP2003 |
VHF Silicon MOSFET Power Amplifier Module(5.5W ,7.2V,220MHz-222MHz)(VHF MOSFET功率放大器模输出功率:5.5W,电压:7.2V,220MHz-222MHz))
|
Semelab(Magnatec)
|
| DE275-501N16A DE275-501N16 |
RF Power MOSFET VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
Directed Energy
|
| BLF145 |
VHF POWER MOSFET
From old datasheet system
|
Advanced Semiconductor
|
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| ASI10704 VFT45-28 |
VHF POWER MOSFET N-Channel Enhancement Mode
|
ASI[Advanced Semiconductor]
|
| MRF138 |
N-Channel Enhancement Mode VHF POWER MOSFET
|
Advanced Semiconductor
Tyco Electronics
ASI
|
| VFT15-12B |
VHF POWER MOSFET N-Channel Enhancement Mode
|
Advanced Semiconductor
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
