| PART |
Description |
Maker |
| FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| MD124S-05VHI MD105S-15VHI MD105S-05VHI MD105D-05VH |
Miniature 1W, SIP, Very High Isolation DC/DC Con vert ers
|
MicroPower Direct, LLC
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| KSC945Y KSC945CG KSC945CL KSC945CO KSC945CR KSC945 |
NPN Epitaxial Silicon Transistor
Audio Frequency Amplifier & High Frequency OSC.
Audio Frequency Amplifier & High Frequency OSC.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| ST49C101A ST49C101ACF8-01 ST49C101ACF8-03 ST49C101 |
High Frequency Clock Multiplier 80 MHz, OTHER CLOCK GENERATOR, PDSO8
High Frequency Clock Multiplier(高频时钟乘法器（掩摸可编程单片模拟锁相环设备
Preprogrammed High Speed Frequency Multiplier
|
Exar, Corp.
EXAR[Exar Corporation]
|
| IS9-2100ARH/PROTO 5962F9953602QXC IS9-2100ARH-Q IS |
High Frequency Half Bridge Driver, Rad-Hard, without UVLO
RES POWER .036 OHM 3W 5% SMT
Radiation Hardened High Frequency Half Bridge Driver 1.5 A HALF BRDG BASED MOSFET DRIVER, CDFP16
|
Intersil Corporation
Intersil, Corp.
|
| 6SVP100M OS-CON6SVP100M |
10 AMP MINIATURE POWER RELAY 操作系统- con公司高级副总裁系列
OS-CON SVP series
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| HF05-1A54-6 HF05-A54-5 HF05-A54-6 HF05-A54-7 HF05- |
High Frequency and High Power Reed Relays
|
Meder Electronic
|
