| PART |
Description |
Maker |
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| LY626416GL-55SLE LY626416GL-45LL LY626416GL-45LLE |
64K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| EM74XXX |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| BS616LV1010 BS616LV1010AC BS616LV1010AI BS616LV101 |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| N01L63W2AB25I N01L63W2AB25IT N01L63W2AT5I N01L63W2 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit
|
ON Semiconductor
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| EM610FV16BW-12S EM610FV16BW-85L EM610FV16BW-85S EM |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
http://
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic Sol...
Emerging Memory & Logic...
|
| A62S6316V-70SI |
64K X 16 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology
|
| CAT28LV64GI-20T CAT28LV64GI-15T CAT28LV64GA-20T CA |
DC-DC Converter, 2Watt, Input VDC: 5, Output VDC: 15, Max Output Current(A): 0.133, Package: SIP4, Isolation(VDC): 1000, Operating Temp. -40C to 85C, Low Ripple & Noise, High Efficiency up to 85%, Low Profile Plastic Case, Single Output
64K-Bit CMOS PARALLEL EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
8K X 8 EEPROM 3V, 200 ns, PDIP28
64K-Bit CMOS PARALLEL EEPROM
|
http://
EEPROM
Abracon, Corp.
Coilcraft, Inc.
Vishay Intertechnology, Inc.
Vicor, Corp.
Catalyst Semiconductor
|
