| PART |
Description |
Maker |
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MB85344C-70 |
CMOS 2M×32 BIT
Hyper Page Mode DRAM Module(CMOS 2M×32超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
| MB814100A-80 MB814100A-60 MB814100A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V4100C-60 MB81V4100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| MB8116400A-70 MB8116400A-50 MB8116400A-60 |
CMOS 4 M ×4 BIT
Fast Page Mode DRAM(CMOS 4 M ×4 位快速页面存取模式动态RAM)
CMOS 4 M ?4 BIT Fast Page Mode DRAM(CMOS 4 M ?4 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| KMM594000-10 KMM594000-8 KMM594000 |
4M x 9 CMOS DRAM Memory Module 4米9的CMOS DRAM记忆体模
4M x 9 CMOS DRAM SIMM Memory Module
|
Samsung Semiconductor Co., Ltd.
Samsung Electronics
|
| MCSOF MCSOF_TBE MCSOF_A MCSOF/A MCSOF/TBE MCSOF/AE |
CRYSTAL OSCILLATOR, CLOCK, 72 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 49.152 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40.6 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 125 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 132.7104 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 100 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 144 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 64 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 160 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 48 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 44.2368 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 110.592 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 102.4 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 128 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 117.946 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 150 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 104 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 108 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 131.072 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40.96 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 50.75 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 60.9 MHz, CMOS OUTPUT
5V CMOS Oscillator Low Jitter
|
Golledge Electronics, Ltd.
GOLLEDGE[Golledge Electronics Ltd]
|
| AS4LC2M8S0-8TC AS4LC1M16S0-8TC AS4LC2M8S0-7TC AS4L |
3.3V 2M ??8/1M ??16 CMOS synchronous DRAM
3.3V 2M 8/1M 16 CMOS synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
3.3V 2M × 8/1M × 16 CMOS synchronous DRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
|
| AAA2800 AAA2801 |
(AAA2800 Series) Static Column Decode Mode CMOS 256k x 1 DRAM
(AAA2800 Series) Page Mode CMOS 256k x 1 DRAM
|
NMB Technologies
|
|
