| PART |
Description |
Maker |
| CY14B116N-BZ25XIT CY14B116S-BZ25XI CY14B116S-BZ25X |
16-Mbit (2048 K 8/1024 K 16/512 K 32) nvSRAM
|
Cypress
|
| IDT72210 IDT72210L12TC IDT72210L12TCB IDT72210L12T |
CMOS SyncFIFOO 64 x 8 256 x 8 512 x 8 1024 x 8 2048 x 8 and 4096 x 8
Dual High Output Current Operational Amplifier 8-SOIC -40 to 85
Current-Mode PWM Controller 8-PDIP 0 to 70
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 的CMOS SyncFIFOO 64 × 856 × 812 × 8024 × 8048 × 8096 × 8
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 1K X 8 OTHER FIFO, 25 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 2K X 8 OTHER FIFO, 25 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 4K X 8 OTHER FIFO, 25 ns, CDIP28
High-Performance Current-Mode PWM Controller 14-SOIC 0 to 70 64 X 8 OTHER FIFO, 12 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 256 X 8 OTHER FIFO, 10 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 1K X 8 OTHER FIFO, PDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 512 X 8 OTHER FIFO, 10 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 的CMOS SyncFIFOO 64 × 8256 × 812 × 81024 × 8048 × 8096 × 8
Dual High Output Current Operational Amplifier 8-PDIP -40 to 85
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| CY14B108K-ZS25XIT CY14B108K-ZS45XI CY14B108K-ZS45X |
8-Mbit (1024 K x 8/512 K x 16) nvSRAM with Real Time Clock
8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP
|
CYPRESS SEMICONDUCTOR CORP
|
| LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO 512 ×一千?二十四分之一十八× 18同步FIFO
|
Sharp, Corp.
|
| M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| IDT72215 IDT72215LB IDT72215LB15G IDT72215LB15GB I |
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18
CMOS SyncFIFOO 256 x 18 512 x 18 1024 x 18 2048 x 18 and 4096 x 18
|
IDT[Integrated Device Technology]
|
| IDT72221L15J IDT72221L15JI IDT72221L15PF IDT72221L |
CMOS SyncFIFOO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
|
IDT[Integrated Device Technology]
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
|
