PART |
Description |
Maker |
K4H280838F-TC_LB3 K4H280438F K4H280438F-TC_LA0 K4H |
128Mb F-die DDR SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187 ; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No 128Mb SDRAM, 3.3V, LVTTL, 166MHz 128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H280838F-ULB3 K4H280438F-UC K4H280438F-UCA0 K4H2 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
HYM7V73A1601BTFG HYM7V73A1601BTFG-75 |
x72 SDRAM Module x72内存模块 16Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 128MB
|
TE Connectivity, Ltd.
|
K8P2716UZC |
128Mb C-die Page NOR Flash
|
Samsung semiconductor
|
HMT351U7CFR8C-H9 HMT351U7CFR8C-RD HMT351U7CFR8C-PB |
DDR3 SDRAM Unbuffered DIMMs Based on 2Gb C-Die DDR3L SDRAM Unbuffered DIMMs Based on 4Gb M-Die
|
Hynix Semiconductor
|
HY5V28CLF-H HY5V28CLF-K HY5V28CLF-S HY5V28CLF-6 HY |
SDRAM - 128Mb
|
Hynix Semiconductor
|
HY5DU28422DT-X HYNIXSEMICONDUCTORINC.-HY5DU28822DT |
128Mb-S DDR SDRAM
|
Hynix Semiconductor Inc.
|
P2V28S30ATP-8 P2V28S20ATP-7 P2V28S20ATP-75 P2V28S2 |
128Mb SDRAM Specification
|
VML[Vanguard International Semiconductor]
|