| PART |
Description |
Maker |
| 3DD5606 |
CASE-RATED BIPOLAR TRANSISTOR
|
JILIN SINO-MICROELECTRONICS
|
| 3DD1556-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1556 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD1555A 3DD1555A-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5010A-O-A-N-D 3DD5310A |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5010HF-O-A-N-D 3DD5310HF |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5032 3DD5032-O-A-N-D 3DD5032-Y-O-A-B-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5044 3DD5044-O-AL-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5044 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRGPC20K |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| IRGPC40K 1982 |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
From old datasheet system
|
IRF[International Rectifier]
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
