PART |
Description |
Maker |
3DD2103 3DD2103-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5036-O-A-N-D 3DD5036 |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD1555A 3DD1555A-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555A FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5010HF-O-A-N-D 3DD5310HF |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5032 3DD5032-O-A-N-D 3DD5032-Y-O-A-B-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5040 3DD5040-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
IRG4BC30K-SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT
|
International Rectifier
|
BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
BUZ101S Q67040-S4013-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS ? Power Transistor INDUCTOR SHIELDED 470UH 20% SMT High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价)
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http:// SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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