PART |
Description |
Maker |
3DD2553 3DD2553-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD2103 3DD2103-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5036-O-A-N-D 3DD5036 |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5031 3DD5031-O-A-N-D 3DD5031-Y-O-A-B-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5031 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD5039 3DD5039-O-HF-N-B |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
3DD2102-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2102 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
IRGPC20K |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
IRG4RC10KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
TC74HC123AF TC74HC123AFN TC74HC123AP HC123 |
Bipolar Transistor; Package/Case:TO-126; Current Rating:500mA; Voltage Rating:300V DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor] http://
|
BUZ111SL Q67040-S4003-A2 BUZ111 |
From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
|
SIEMENS[Siemens Semiconductor Group]
|
BUZ100 C67078-S1348-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价) SIPMOS ? Power Transistor From old datasheet system
|
SIEMENS AG http:// Infineon Siemens Semiconductor Group
|