| PART |
Description |
Maker |
| BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE
High Voltage Switching Diode
|
ON Semiconductor
|
| 150KR60 150KSR10 150KSR40 150KSR30 150KR20 150KR30 |
Diode Switching 600V 150A 2-Pin DO-8
Diode Switching 100V 150A 2-Pin Case B-42
Diode Switching 400V 150A 2-Pin Case B-42
Diode Switching 300V 150A 2-Pin Case B-42
Diode Switching 200V 150A 2-Pin DO-8
Diode Switching 300V 150A 2-Pin DO-8
|
New Jersey Semiconductor
|
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| PS205KVP8.2PF/-2PFR16 PS405KVP1000PF/-10N2200 PS20 |
CAPACITOR, CERAMIC, 0.0000082 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.001 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.000033 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.00033 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.00039 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.00047 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.000047 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.00002 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.000022 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.000027 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.000056 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.00056 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.0000056 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.0000068 uF, CHASSIS MOUNT
CAPACITOR, CERAMIC, 0.00012 uF, CHASSIS MOUNT
|
Vishay Intertechnology, Inc.
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 1N6642 1N4305 1N4149 1N4449 1N4444 1N4447 1N6638 1 |
COMPUTER DIODE Switching
COMPUTER SWITCHING DIODE
200mA Low Power Switching
|
MICROSEMI CORP-LOWELL
MICROSEMI[Microsemi Corporation]
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| 1N5806D2B-JQRS.GRPC 1N5806D2A |
1 A, 150 V, SILICON, SIGNAL DIODE HERMETIC SEALED, CERAMIC, DLCC2 VARIANT B, 2 PIN
ULTRAFAST RECOVERY RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
|
