| PART |
Description |
Maker |
| ZXTP05120HFF ZXTP05120HFFTA |
120V, SOT23F, PNP medium power Darlington transistor
|
Diodes Incorporated
|
| ZXTN04120HFF ZXTN04120HFFTA |
120V, SOT23F, NPN medium power Darlington transistor
|
Diodes Incorporated
|
| ZXTP19060CFF ZXTP19060CFFTA |
60V, SOT23F, PNP medium power transistor
|
Diodes Incorporated
|
| ZXTP25020CFF ZXTP25020CFFTA |
20V, SOT23F, PNP medium power transistor
|
Diodes Incorporated
|
| ZXTP07040DFF ZXTP07040DFFTA |
40V, SOT23F, PNP medium power transistor
|
Diodes Incorporated
|
| ZXTN08400BFF ZXTN08400BFFTA |
400V, SOT23F, NPN medium power high voltage transistor
|
Diodes Incorporated
|
| FMMT494Q-17 |
120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
Diodes Incorporated
|
| BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏，1安PNP型中等功率晶体管
Si, POWER TRANSISTOR
45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
| 2SA1804O 2SA1804 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 8A I(C) | TO-247VAR
|
TOSHIBA
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| 2SA1358Y 2SA1358 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126VAR 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1A条一（c）|26VAR
|
TOSHIBA
|
