| PART |
Description |
Maker |
| TIM3742-8SL-341 |
IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| ATA5771 ATA577110 ATA5774 |
Output Power of 8dBm at 315MHz / 7.5dBm at 433.92 MHz / 5.5dBm at 868.3MHz
|
ATMEL Corporation
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
| MW7IC008NT1 MW7IC008NT111 |
RF LDMOS Wideband Integrated Power Amplifier Stable into a 5:1 VSWR. All Spurs Below --60 dBc
|
Freescale Semiconductor, Inc
|
| STGIPL14K60 |
IGBT intelligent power module (IPM) 14 A, 600 V, DBC isolated SDIP-38L molded
|
STMicroelectronics
|
| STGIPS14K60 |
IGBT intelligent power module (IPM) 12 A, 600 V, DBC isolated, SDIP-25L molded
|
STMicroelectronics
|
| TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM3438-12UL |
HIGH POWER P1dB=41.5dBm at 3.4GHz to 3.8GHz
|
Toshiba Semiconductor
|
| TIM7179-4UL |
HIGH POWER P1dB=36.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| AWT6106 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc.
|
|
