| PART |
Description |
Maker |
| TIM7785-12UL09 |
HIGH POWER P1dB=41.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM5964-16UL TIM5964-16UL09 |
HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM5964-8UL |
HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM4450-4UL06 |
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| TIM6472-6UL |
HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM4450-16UL09 |
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
| AWT6106 AWT6106M5P8 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
From old datasheet system
Power Amplifiers
|
ANADIGICS, Inc
|
| TIM3742-8SL-341 |
IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TDA4863-2 TDA4863-2G Q67040-S4620 Q67040-S4621 |
Power Control ICs - PFC-IC for high Output Power in SMD-Package
Power Factor Controller IC for High Power Factor and Low THD
|
INFINEON[Infineon Technologies AG]
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
