PART |
Description |
Maker |
MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
MRFG35010NT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35002N6T1 |
GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
Freescale Semiconductor, Inc
|
MRFG35030R5 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
|
MGRB1018_D ON1882 MGRB1018 |
Power Manager Gallium Arsenide Power Rectifier From old datasheet system GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
GS150TC25104 GS150TA25104 GS150TI25104 |
Gallium Arsenide Schottky Rectifier 4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE
|
IXYS Corporation
|
DGSK40-025CS DGS19-025CS |
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB PLASTIC PACKAGE-4 31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA PLASTIC PACKAGE-4
|
IXYS, Corp.
|
GN04005 |
Gallium Arsenide Devices
|
Panasonic
|
GN05009N |
Gallium Arsenide Devices
|
Panasonic
|