PART |
Description |
Maker |
MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
CHA-20NF |
(CHA-20xx) Coaxial Attenuators
|
Component General
|
JANSR2N7410 FN4500 |
3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
S4707-01 |
MOSFET, Switching; VDSS (V): 600; ID (A): 21; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.315; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 0.107; Package: TO-3P
|
Hamamatsu Photonics
|
IRFF310 FN1888 |
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET From old datasheet system 1.35A 400V 3.600 Ohm N-Channel Power MOSFET 1.35A/ 400V/ 3.600 Ohm/ N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
FRM450H FRM450D FN3236 FRM450R |
10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs 10A/ 500V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
STP9N60M2 STD9N60M2 |
Extremely low gate charge N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics ST Microelectronics
|
BSP125E6433 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS A G
|
BSP125L6327 |
0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
|
1N60AG-A-T92-B |
0.5 A, 600 V, 15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
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