PART |
Description |
Maker |
BSC052N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPSH6N03LB |
OptiMOS2 Power-Transistor
|
Infineon Technologies
|
IPP07N03LBG IPP07N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSC027N03SG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP04N03LBG IPP04N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSC059N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPB06N03LB |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO104N03S |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 9.7mOhm, 13A, LL OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSB053N03LPG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|