PART |
Description |
Maker |
SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
SPD02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG http://
|
SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPS02N60C3 SPS02N60C309 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
IPW60R250CP |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
SPB02N60S5 SPB02N60S507 |
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
IPW60R099CP IPW60R099CP08 |
Cool MOS Power Transistor Feature new revolutionary high voltage technology
|
Infineon Technologies AG
|
SPP17N80C3 SPP17N80C307 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|