| PART |
Description |
Maker |
| 2SD662 2SD662B |
Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| SPT6693 |
20 AMP HIGH VOLTAGE HIGH ENERGY NPN TRANSISTOR 400 VOLTS
|
Solid States Devices
|
| 2SA1971 |
High voltage: VCE = -400 V Collector-base voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 5302DG-T60-K 5302DG-T92-B 5302DG-T92-K 5302DG-TM3- |
HIGH VOLTAGE NPN TRANSISTOR WITH DIODE
2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| FJP13007H1TU FJP13007H2TU |
High Voltage Switch Mode Application 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FJP13009TU |
High Voltage Fast-Switching NPN Power Transistor 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| MJE13009 E13009 |
12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
|
STMICROELECTRONICS
ST Microelectronics
|
| 0399100302 399100302 913502 |
10.16mm (.400) Beau Eurostyle? Fixed Mount PCB Terminal Block, High Voltage, High Power 40A, 2 Circuits
10.16mm (.400) Beau?/a> Eurostyle? Fixed Mount PCB Terminal Block, High Voltage, High Power 40A, 2 Circuits
10.16mm (.400") Beau垄芒 Eurostyle垄芒, Fixed Mount PCB Terminal Block, High Voltage, High Power 40A, 2 Circuits
MOLEX Connector
|
Molex Electronics Ltd.
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB |
16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
|
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
|
