| PART |
Description |
Maker |
| IRF440R IRFP442R IRFP443R IRFP441R |
Avalanche Energy Rated N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| IRF533 |
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated
|
Harris Corporation
|
| PHD2N60E PHP2N60E PHB2N60E |
PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| IRF830 |
PowerMOS transistor Avalanche energy rated 5.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 90002E3 90008E3 90001E3 90003E3 90004E3 90006E3 90 |
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
|
Vishay Siliconix
|
| IRF5NJ6215 |
Avalanche Energy Ratings
POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A)
-150V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
International Rectifier
|
| EM4-DINAV53 EM4-DINAV13ADR EM4-DINAV13AOR EM4-DINA |
Energy Management Energy Meter with plug-in Output Modules 能源管理电能表与插件输出模块
|
Electronic Theatre Controls, Inc.
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| CBC-EVAL-09 |
EnerChip Energy Processor for Energy Harvesting Applications
|
Cymbet Corporation
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
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