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BOE100LH - TO18 Plastic IR Emitter Leaded Housing

BOE100LH_4947660.PDF Datasheet


 Full text search : TO18 Plastic IR Emitter Leaded Housing
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 Related Part Number
PART Description Maker
CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
Continental Device India Limited
CSB772P CSB772R CSB772 CSB772E CSB772Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
CDIL[Continental Device India Limited]
CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE
NPN SILICON PLANAR TRANSISTOR
CDIL[Continental Device India Limited]
CTN640 CTN635 CTN636 CTN637 CTN638 CTN639 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 25 - hFE
Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier
CDIL[Continental Device India Limited]
CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
Continental Device India Limited
CSB1370 CSB1370F CSB1370D CSB1370E 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
CDIL[Continental Device India Limited]
CSD288 CSA614 CSA614Y 25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 120 - 240 hFE.
PNP/NPN PLASTIC POWER TRANSISTOR
CDIL[Continental Device India Limited]
KGEA-BFCR KGEA-BFCR-B0240J KGEA-BFCR-B0033J KGEA-B Keyless go emmitter antenna housing plastic with resing and outside connector
Emitter antenna housing plastic base with resing and outside connector unsealed & sealed
PREMO CORPORATION S.L
CSD363 CSD363O CSD363R CSD363Y 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
Continental Device India Limited
93AA46BT-I_MSG 93LC46BT-E/MS 93LC46BT-E/MSG 93LC46 1K Microwire Compatible Serial EEPROM 一千微丝兼容串EEPROM
IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:255W; Package/Case:Module; C-E Breakdown Voltage:600V 一千微丝兼容串行EEPROM
Film Capacitor; Voltage Rating:250VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 5%; Lead Pitch:10mm; Package/Case:C; Series:160; Termination:Radial Leaded RoHS Compliant: Yes 一千微丝兼容串行EEPROM
1K Microwire Compatible Serial EEPROM 一千微丝兼容串行EEPROM
RES,MF,1K,OHMS,1/4W,1% 一千微丝兼容串行EEPROM
Silver Mica Capacitor; Capacitance:910pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.56uF; Capacitance Tolerance: /- 10%; Lead Pitch:22.5mm; Leaded Process Compatible:No; Package/Case:O; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Silver Mica Capacitor; Capacitance:4pF; Capacitance Tolerance: /- 0.5pF; Series:CD17; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
Silver Mica Capacitor; Capacitance:4pF; Capacitance Tolerance: /- 0.5pF; Series:CD17; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
RES 100K MF 1/4W F 0500LS 250V T&R
93AA46A/B/C/ 93LC46A/B/C/ 93C46A/B/C Datasheet
IGBT Module; Continuous Collector Current, Ic:50A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:125W; C-E Breakdown Voltage:600V; Collector Current:50A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: Yes
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.56uF; Capacitance Tolerance: 10%; Lead Pitch:22.5mm; Leaded Process Compatible:Yes; Package/Case:O; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Silver Mica Capacitor; Capacitance:2pF; Capacitance Tolerance: /- 0.5pF; Series:CD17; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No
Silver Mica Capacitor; Capacitance:5pF; Capacitance Tolerance: /- 0.5pF; Series:CD17; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
Silver Mica Capacitor; Capacitance:680pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:No RoHS Compliant: No
Special Function IC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
Microchip Technology, Inc.
Microchip Technology Inc.
http://
CFD2375P CFD2375Q 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 800 - 1500 hFE.
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1000 hFE.
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1500 hFE.
Continental Device India Limited
 
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