PART |
Description |
Maker |
CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
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Continental Device India Limited
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CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
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CDIL[Continental Device India Limited]
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CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE NPN SILICON PLANAR TRANSISTOR
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CDIL[Continental Device India Limited]
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CTN640 CTN635 CTN636 CTN637 CTN638 CTN639 |
1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 25 - hFE Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier
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CDIL[Continental Device India Limited]
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CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P 10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
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Continental Device India Limited
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CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
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CDIL[Continental Device India Limited]
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CSD288 CSA614 CSA614Y |
25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 120 - 240 hFE. PNP/NPN PLASTIC POWER TRANSISTOR
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CDIL[Continental Device India Limited]
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KGEA-BFCR KGEA-BFCR-B0240J KGEA-BFCR-B0033J KGEA-B |
Keyless go emmitter antenna housing plastic with resing and outside connector Emitter antenna housing plastic base with resing and outside connector unsealed & sealed
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PREMO CORPORATION S.L
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CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE. 40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
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Continental Device India Limited
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93AA46BT-I_MSG 93LC46BT-E/MS 93LC46BT-E/MSG 93LC46 |
1K Microwire Compatible Serial EEPROM 一千微丝兼容串EEPROM IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:600V; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:255W; Package/Case:Module; C-E Breakdown Voltage:600V 一千微丝兼容串行EEPROM Film Capacitor; Voltage Rating:250VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 5%; Lead Pitch:10mm; Package/Case:C; Series:160; Termination:Radial Leaded RoHS Compliant: Yes 一千微丝兼容串行EEPROM 1K Microwire Compatible Serial EEPROM 一千微丝兼容串行EEPROM RES,MF,1K,OHMS,1/4W,1% 一千微丝兼容串行EEPROM Silver Mica Capacitor; Capacitance:910pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:Yes RoHS Compliant: Yes Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.56uF; Capacitance Tolerance: /- 10%; Lead Pitch:22.5mm; Leaded Process Compatible:No; Package/Case:O; Peak Reflow Compatible (260 C):No RoHS Compliant: No Silver Mica Capacitor; Capacitance:4pF; Capacitance Tolerance: /- 0.5pF; Series:CD17; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No Silver Mica Capacitor; Capacitance:4pF; Capacitance Tolerance: /- 0.5pF; Series:CD17; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:Yes RoHS Compliant: Yes RES 100K MF 1/4W F 0500LS 250V T&R 93AA46A/B/C/ 93LC46A/B/C/ 93C46A/B/C Datasheet IGBT Module; Continuous Collector Current, Ic:50A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:125W; C-E Breakdown Voltage:600V; Collector Current:50A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: Yes Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.56uF; Capacitance Tolerance: 10%; Lead Pitch:22.5mm; Leaded Process Compatible:Yes; Package/Case:O; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Silver Mica Capacitor; Capacitance:2pF; Capacitance Tolerance: /- 0.5pF; Series:CD17; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:No RoHS Compliant: No Silver Mica Capacitor; Capacitance:5pF; Capacitance Tolerance: /- 0.5pF; Series:CD17; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.9mm; Leaded Process Compatible:Yes RoHS Compliant: Yes Silver Mica Capacitor; Capacitance:680pF; Capacitance Tolerance: /- 5%; Series:CD16; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:5.94mm; Leaded Process Compatible:No RoHS Compliant: No Special Function IC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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Microchip Technology, Inc. Microchip Technology Inc. http://
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CFD2375P CFD2375Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 800 - 1500 hFE. 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1000 hFE. 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1500 hFE.
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Continental Device India Limited
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