| PART |
Description |
Maker |
| ATA5771 ATA577110 ATA5774 |
Output Power of 8dBm at 315MHz / 7.5dBm at 433.92 MHz / 5.5dBm at 868.3MHz
|
ATMEL Corporation
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM5964-8UL |
HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM7179-12UL |
HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM6472-12UL09 |
HIGH POWER P1dB=41.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| TIM6472-6UL |
HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| AWT6132R AWT6132RM5P8 AWT6132RM5P9 |
415 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6136 AWT6136RM5P8 AWT6136M5P8 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS[ANADIGICS, Inc]
|
| AWT6252M7P8 AWT6252 |
IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets.
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
