| PART |
Description |
Maker |
| NJG1110PB1 |
PDC Dual Band LNA GaAs MMIC
|
njr
|
| HMC669LP3 HMC669LP3E |
GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz
|
http://
Hittite Microwave Corporation
|
| MF-MSMD030 MF-MSMD020 MF-MSMD010 MF-MSMD014 MF-MSM |
Ka Band LNA
Q-band Power Amplifier
17 - 43 GHz MPA/Multiplier
Ka-Band Power Amplifier
27 - 31 GHz 2W Balanced Power Amplifier
K Band LNA
Ka Band HPA
PTC Resettable Fuses
|
Bourns Inc.
Bourns Electronic Solutions
|
| RF2495 |
900MHZ 3V LOW CURRENT LNA/MIXER
|
RF Micro Devices
|
| BGA425 Q62702-G0058 Q62702-S497 Q62702-S633 Q62702 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 Ω block LNA / MIX Unconditionally stable)
SI-MMIC-AMPLIFIER IN SIEGET 25-TECHNOLOGIE (MULTIFUNCTIONAL CASC. 50 ヘ BLOCK LNA / MIX UNCONDITIONALLY STABLE)
From old datasheet system
Si-MMIC-Amplifier in SIEGET 25-Technologie
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) SIPMOS小信号晶体管P通道增强模式的逻辑电平
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| XD1005-QT-EV1 XD1005-QT-0G00 MIMIXBROADBANDINC.-XD |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN 10.0-40.0千兆赫的GaAs MMIC分布式放大器QFN封装
|
Mimix Broadband, Inc.
|
| NJG1709KC1 NJG1709KC1-C1 NJG1709KC1-C10 NJG1709KC1 |
1.5/1.9GHz BAND FRONT-END GaAs MMIC
|
NJRC[New Japan Radio]
|
| NJG1711KC1 |
800MHz BAND FRONT-END GaAs MMIC
|
njr
|
| NJG1557KB2 |
800MHz Band Mixer GaAs MMIC(用于800MHz频带蜂巢电话的砷化镓单片微波集成电路混频
|
New Japan Radio Co., Ltd.
njr
|
| MAAL-010528-001SMB MAAL-010528-TR0500 |
The MAAL-010528 is a high performance X-band GaAs LNA, housed in a miniature, lead-free 3 mm PQFN surface mount plastic package.
|
M/A-COM Technology Solutions, Inc.
|
