PART |
Description |
Maker |
BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor L-band radar LDMOS driver transistor From old datasheet system
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BLS6G2731S-130 |
LDMOS S-band radar power transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
BLS6G2731P-200 |
LDMOS S-Band radar pallet amplifier
|
NXP Semiconductors N.V.
|
BLL1214-35 |
L-band radar LDMOS driver transistor
|
NXP Semiconductors
|
BLL1214-250 BLL1214-250_2 |
L-band radar LDMOS transistor From old datasheet system
|
Philips
|
BLS7G2730L-200P BLS7G2730L-200P-15 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
AM82731-050 2770 |
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管) From old datasheet system S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
MAPPST2933-190M |
S BAND, Si, NPN, RF POWER TRANSISTOR HERMETICALLY SEALED PACKAGE-4 Radar Pulsed Power Pallet 190W, 2.9-3.3 GHz
|
M/A-COM Technology Solutions, Inc.
|
PH2729-150M07 PH2729-150M |
S BAND, Si, NPN, RF POWER TRANSISTOR Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100レs Pulse, 10% Duty Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100渭s Pulse, 10% Duty Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty
|
Tyco Electronics
|
BLC6G22-100 BLC6G22LS-100 BLC6G22-130 |
UHF power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|