| PART |
Description |
Maker |
| VG36128401BT VG36128161BT VG36128801BT |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semi...
|
| VG36646141BT-8 |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| VG3617161BT VG3617161BT-55 VG3617161BT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
ETC[ETC]
|
| VG3617161DT VG3617161DT-10 VG3617161DT-6 VG3617161 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| IC42S16100 IC42S16100-5T IC42S16100-6TG |
512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
DYNAMIC RAM, SDRAM
|
Integrated Circuit Solu...
ICSI
|
| 5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MK31VT864A-8YC |
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字64位同步动态RAM模块)
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字4位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| MK32VT864-10YE |
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字64位同步动态RAM模块)
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字4位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| IS42S16100A1-10T |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
