Part Number Hot Search : 
UPD65650 M1301 23010 STC9120M HDL62SLC A3143LUA SN66060B PPB3781
Product Description
Full Text Search

M13S5121632A - 8M x 16 Bit x 4 Banks Double Data Rate SDRAM

M13S5121632A_4881448.PDF Datasheet


 Full text search : 8M x 16 Bit x 4 Banks Double Data Rate SDRAM
 Product Description search : 8M x 16 Bit x 4 Banks Double Data Rate SDRAM


 Related Part Number
PART Description Maker
M13S64164A-5BG M13S64164A-5TG M13S64164A-6BG M13S6 1M x 16 Bit x 4 Banks Double Data Rate SDRAM
Elite Semiconductor Memory Technology Inc.
M13S128168A-7.5AB M13S128168A-5BG M13S128168A-5T M 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
Elite Semiconductor Memory Technology Inc.
ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6    Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D2616 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 200万16 × 4,银行双数据速率同步DRAM
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
MSM27V1655CZ 524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
OKI electronic components
OKI[OKI electronic componets]
K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12 DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks
Micron Technology
W9412G2IB W9412G2IB4 W9412G2IB-6I 1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
Winbond
WINBOND ELECTRONICS CORP
 
 Related keyword From Full Text Search System
M13S5121632A pin M13S5121632A upload M13S5121632A описание M13S5121632A gdcy M13S5121632A ic资料网
M13S5121632A national M13S5121632A application M13S5121632A 的参数 M13S5121632A module M13S5121632A analog devices
 

 

Price & Availability of M13S5121632A

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.4641950130463