PART |
Description |
Maker |
RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
AH478 AH478Z5-BE1 AH478Z5-BG1 |
SINGLE PHASE HALL EFFECT LATCH WITH LOCKED PROTECTION MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT ROHS COMPLIANT, TO-95 MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-95
|
BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing, Ltd.
|
SSM3K05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE
|
Toshiba Semiconductor
|
SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX |
Quad bidirectional Transi array for ESD protection
|
STMicroelectronics
|
SSM3J09FU |
Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
AH1751-WG-A-A AH1751-PG-7-A AH1751-PG-A-A AH1751-P |
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, 300mV, RECTANGULAR, THROUGH HOLE MOUNT HALL EFFECT LATCH
|
Diodes Inc. Diodes Incorporated
|
SSM5N05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
OH3075U |
Hallogic Hall-effect Sensors MAGNETIC FIELD SENSOR-HALL EFFECT, -25-25mT, 100-400mV, RECTANGULAR, THROUGH HOLE MOUNT
|
TT electronics OPTEK Technology
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|